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MICROWAVE CORPORATION
HMC165S14
V01.0101
GaAS MMIC SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
Features
LOW INSERTION LOSS: 0.4dB INTEGRATED 2:4 DECODER 14 LEAD SOIC PACKAGE
General Description
The HMC165S14 is a low-cost SP4T switch in a 14-lead SOIC package for use in antenna diversity, switched filter banks, gain/ attenuation selection, and general channel multiplexing applications. The switch can control signals up to 2.5 GHz and is especially suited for 800-1000 MHz basestation applications*. A 2:4 decoder is integrated on the switch, requiring only 2 control lines and a negative bias to select each RF path. Switch outputs are reflective shorts when "Off". The 2:4 decoder replaces 4 to 8 control lines normally required by GaAS SP4T switches. See positive bias/TTL SP4T HMC241QS16.
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SWITCHES
Guaranteed Performance
For 0/-5V Control and Vee = -5V in a 50 Ohm System, -40 to +85 deg C
Parameter Inser tion Loss Frequency DC - 0.5GHz DC - 1.0GHz DC - 2.0GHz DC -0.5GHz DC - 1.0GHz DC - 2.0GHz DC -1.0GHz DC - 2.0GHz 50 MHz 0.5 - 2.0GHz 50 MHz 0.5 - 2.0GHz DC - 2.0GHz 25 50 ns ns 35 28 20 16 8.5 Min. Typ. 0.3 0.5 1.0 39 32 24 20 11 22 24 35 42 Max. 0.6 0.8 1.3 Units dB dB dB dB dB dB dB dB dB m dB m
SP4T SMT
Isolation Return Loss Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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'9 9
HMC165S14
MICROWAVE CORPORATION
ne
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HMC165S14 SP4T SWITCH DC TO 2.0 GHz
V01.0101
FEBRUARY 2001
Insertion Loss
0 -0.5
Isolation
0 -10
ISOLATION (dB)
INSERTION LOSS (dB)
-1 -1.5 -2 -2.5 -3 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
-20 -30 -40 -50 -60 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
Return Loss
0
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SWITCHES
RF1, RF2, RF3, RF4
RETURN LOSS (dB)
-10
RF COMMON
-30
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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SMT
-40
SP4T
-20
'9
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HMC165S14
MICROWAVE CORPORATION
HMC165S14 SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
V01.0101
Functional Diagram
GND RF4 GND RFC GND RF1 GND PIN 1
2:4
DECODER
GND
RF3
Vee
B
A
RF2
GND
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SWITCHES
Absolute Maximum Ratings
Bias Voltage Range (Por t Vee) Control Voltage Range (A & B) Storage Temperature Operating Temperature Maximum Input Power -7.0 Vdc Vee -0.5V to +1.0 Vdc -65 to +150 deg C -40 to +85 deg C +27dBm (<500MHz) +30dBm (>500MHz)
Truth Table
Control Input A H i gh Low H i gh Low B H i gh H i gh Low Low Signal Path State RFCOM to: R F1 R F2 R F3 R F4
SP4T
Bias Voltage & Current
Vee Range = -5.0 Vdc 10% Vee (Vdc) -5.0 Iee (Typ.) (mA) 3.0 Iee (Max.) (mA) 6.0
Control Voltages
State Low High Bias Condition 0 to -3 VDC @ 220uA Typ. Vee +0.8 VDC @ 100uA Max.
SMT
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 24
'9 9
HMC165S14
MICROWAVE CORPORATION
ne
w !
HMC165S14 SP4T SWITCH DC TO 2.0 GHz
V01.0101
FEBRUARY 2001
Outline
PIN 14 GND RF2 A 0.337/0.344 (8.55/8.75) B Vee RF3 GND COUNTRY OF ORIGIN
0.150/0.157 (3.81/4.00)
HMC165S14
GND RF1 GND RFC GND RF4 GND
0.229/0.244 (5.82/6.20)
CCCC
XXXXX YYWW
LOT NUMBER
DATE CODE YY= YEAR WW= WEEK
PIN 1
PIN 1 (REF)
0.054/0.068 (1.37/1.73) 0.050 (1.27) TYP 3 DEG/8 DEG 0.014/0.018 (0.36/0.46) TYP 0.004/0.009 (0.10/0.23)
0.007/0.009 (0.18/0.25) TYP 0.016 (0.41) MIN TYP
1)
TTL Interface Circuit
Vcc TTL Control A 5.1V Zener To A 74HCT04 (1/6) 10K Vee Ohm -5 VDC
Vcc TTL Control B To B 5.1V Zener 74HCT04 (1/6) 10K Vee Ohm -5 VDC
Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates (Vee) and to Vee (pin 10) of the RF switch.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 25
SMT
SP4T
SWITCHES
2. 3.
MATERIAL: A) PACKAGE BODY LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED B) LEADFRAME MATERIAL: COPPER ALLOY PLATING: LEAD-TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS) UNLESS OTHERWISE SPECIFIED TOL. ARE 0.005(0.13)
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